A new type of nonvolatile computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices is being developed at Purdue University’s Birck Nanotechnology Center.
The technology combines silicon nanowires with a ferroelectric polymer, a material that switches polarity when electric fields are applied, making possible a new type of ferroelectric transistor. It has the potential to use 99 percent less energy than flash memory